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putin IS MURDERER

Please use this identifier to cite or link to this item: https://oldena.lpnu.ua/handle/ntb/42623
Title: Modeling of concentration profiles of charge carriers in inhomogeneous epitaxial layers
Authors: Pavlysh, V.
Danchyshyn, I.
Korzh, R.
Dronyuk, M.
Affiliation: Lviv Polytechnic National University
Bibliographic description (Ukraine): Modeling of concentration profiles of charge carriers in inhomogeneous epitaxial layers / V. Pavlysh, I. Danchyshyn, R. Korzh, M. Dronyuk // Вісник Національного університету "Львівська політехніка". – 2002. – № 458 : Елементи теорії та прилади твердотілої електроніки. – С. 267–271. – Bibliography: 2 titles.
Journal/Collection: Елементи теорії та прилади твердотілої електроніки
Issue Date: 2002
Publisher: Видавництво Національного університету «Львівська політехніка»
Country (code): UA
Place of the edition/event: Львів
Keywords: semiconductor
model
growth
electroconductivity
Number of pages: 267–271
Abstract: The new approach to the construction of the microtechnology physical-technological models is proposed in the present work. This approach allows us to analyse the processes of the IC and hybride IC epitaxial, resistive and conductive structures growth and formation of their electrophysical and mechanical parameters. We elaborated the model describing charge carriers concentration profile of inhomogeneous epitaxial structures that were grown under different technological conditions.
URI: https://ena.lpnu.ua/handle/ntb/42623
Copyright owner: © V. Pavlysh, I. Danchyshyn, R. Korzh, M. Dronyuk, 2002
References (Ukraine): 1. Voronin V., Pavlysh V., Dronyuk M, Danchyshyn I. Modelling of Epitaxial Films and Structures, Growing of Gas Phase //First Int. Conference on Epitaxial Crystal Growth. April 1- 7, 1990, Budapest, (.351-353. 2. Pavlysh V., Korzh R., Dronyuk M., Danchyshyn I. Integrated Circuit Film Layers Characteristics Modelling //Abstracts, Information & Participants, Ukrainian- French Symposium "Condensed Matter: Scien"e and Industry", Lviv, February 20-27, 1993, (.56.
Content type: Article
Appears in Collections:Елементи теорії та прилади твердотілої електроніки. – 2002. – №458

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