| DC Field | Value | Language |
|---|
| dc.contributor.author | Pavlysh, V. | - |
| dc.contributor.author | Danchyshyn, I. | - |
| dc.contributor.author | Korzh, R. | - |
| dc.contributor.author | Dronyuk, M. | - |
| dc.date.accessioned | 2018-09-12T08:06:14Z | - |
| dc.date.available | 2018-09-12T08:06:14Z | - |
| dc.date.issued | 2002 | - |
| dc.identifier.citation | Modeling of concentration profiles of charge carriers in inhomogeneous epitaxial layers / V. Pavlysh, I. Danchyshyn, R. Korzh, M. Dronyuk // Вісник Національного університету "Львівська політехніка". – 2002. – № 458 : Елементи теорії та прилади твердотілої електроніки. – С. 267–271. – Bibliography: 2 titles. | uk_UA |
| dc.identifier.uri | https://ena.lpnu.ua/handle/ntb/42623 | - |
| dc.description.abstract | The new approach to the construction of the microtechnology physical-technological models is proposed in the present work. This approach allows us to analyse the processes of the IC and hybride IC epitaxial, resistive and conductive structures growth and formation of their electrophysical and mechanical parameters. We elaborated the model describing charge carriers concentration profile of inhomogeneous epitaxial structures that were grown under different technological conditions. | uk_UA |
| dc.language.iso | en | uk_UA |
| dc.publisher | Видавництво Національного університету «Львівська політехніка» | uk_UA |
| dc.subject | semiconductor | uk_UA |
| dc.subject | model | uk_UA |
| dc.subject | growth | uk_UA |
| dc.subject | electroconductivity | uk_UA |
| dc.title | Modeling of concentration profiles of charge carriers in inhomogeneous epitaxial layers | uk_UA |
| dc.type | Article | uk_UA |
| dc.rights.holder | © V. Pavlysh, I. Danchyshyn, R. Korzh, M. Dronyuk, 2002 | uk_UA |
| dc.contributor.affiliation | Lviv Polytechnic National University | uk_UA |
| dc.coverage.country | UA | uk_UA |
| dc.format.pages | 267–271 | - |
| dc.relation.references | 1. Voronin V., Pavlysh V., Dronyuk M, Danchyshyn I. Modelling of Epitaxial Films and Structures, Growing of Gas Phase //First Int. Conference on Epitaxial Crystal Growth. April 1- 7, 1990, Budapest, (.351-353. 2. Pavlysh V., Korzh R., Dronyuk M., Danchyshyn I. Integrated Circuit Film Layers Characteristics Modelling //Abstracts, Information & Participants, Ukrainian- French Symposium "Condensed Matter: Scien"e and Industry", Lviv, February 20-27, 1993, (.56. | uk_UA |
| dc.citation.journalTitle | Елементи теорії та прилади твердотілої електроніки | - |
| dc.coverage.placename | Львів | uk_UA |
| Appears in Collections: | Елементи теорії та прилади твердотілої електроніки. – 2002. – №458
|
