| DC Field | Value | Language |
|---|
| dc.contributor.author | Łysko, Jan M. | - |
| dc.contributor.author | Nikodem, Marek | - |
| dc.contributor.author | Latecki, Bogdan | - |
| dc.contributor.author | Górska, Marianna | - |
| dc.contributor.author | Studzińska, Krystyna | - |
| dc.date.accessioned | 2018-08-28T13:57:13Z | - |
| dc.date.available | 2018-08-28T13:57:13Z | - |
| dc.date.issued | 2002 | - |
| dc.identifier.citation | Elements of the silicon TCD design and technology / J. M. Łysko, M. Nikodem, B. Latecki, M. Górska, K. Studzińska // Вісник Національного університету "Львівська політехніка". – 2002. – № 458 : Елементи теорії та прилади твердотілої електроніки. – С. 61–66. – Bibliography: 8 titles. | uk_UA |
| dc.identifier.uri | https://ena.lpnu.ua/handle/ntb/42519 | - |
| dc.description.abstract | Silicon TCD (Thermal Conductivity Detector, katarometer) chip analytical model, elements of the design and technology are presented. Detector was designed for the pTAS (Micro Total Analysis System) application to recognize the composition of the different gas mixtures. TCD consists of the two pieces : glass plate and silicon chip. Two parallel flow channels 15 000 pm long, 400 pm wide and 50 pm deep were etched in the silicon chip and milled in the glass plate. Some of resistors were designed to act as a heaters and the other ones as a thermo resistors. Composition changes of the mixture flowing throughout the channel cause the temperature distribution changes and thermo resistors electrical response. Distance between the heaters and thermo resistors is of the great importance to the TCD sensitivity. VLSI silicon technology was applied to reduce geometrical dimensions and micromechanical technology to over-hange resistors across the flow channels to reduce thermal capacity and heat loses to the bulk and environment. | uk_UA |
| dc.language.iso | en | uk_UA |
| dc.publisher | Видавництво Національного університету "Львівська політехніка" | uk_UA |
| dc.subject | model | uk_UA |
| dc.subject | design | uk_UA |
| dc.subject | technology | uk_UA |
| dc.subject | silicon | uk_UA |
| dc.subject | detector | uk_UA |
| dc.title | Elements of the silicon TCD design and technology | uk_UA |
| dc.type | Article | uk_UA |
| dc.rights.holder | © Jan M. Łysko, Marek Nikodem, Bogdan Latecki, Marianna Górska, Krystyna Studzińska, 2002 | uk_UA |
| dc.contributor.affiliation | Institute of Electron Technology, Poland | uk_UA |
| dc.coverage.country | UA | uk_UA |
| dc.format.pages | 61–66 | - |
| dc.relation.references | [1] T.SJ.Lammerink, N.RTas, M.Elwenspoek, J.H.J.Fluitman, „Micro-liquid flow sensor, Sensors & Actuators, vol. A37-38, pp.45. [2] B.Latecki, J.Lozinko, J.M.Lysko, „Krzemowy katarometr — model analityczny’, Elektronizaqa 12/2001, s.23-25 (in Polish). [3] J.M.Lysko, J.Koszur, B.Latecki, “Analityczny model krzemowego detektora cieplno- przewodnosciowego”, Materiafy konferencyjne IKraijowej Konferencji Elektroniki KKE2002, Kolobrzeg-Dzwirzyno (2002) T.2, pp.815-819 (in Polish). [4] ZBiernadki, Sensory i systemy termoanemometryczne, WNT Warszawa 1999 (in Polish). [5@ Lysko J.M., Lozinko J., Jazwinski J., Latecki B., Panas A., Gorska M., “Krzemowy katarometr z kontaktami typu BSC”, Materiafy konferencyjne VII Konferencji NaUkowej COE’2002, Rzeszow (2002) T.1 123-126 (in Polish). [6] Lysko J.M., Gorska M., Wrzesinska H., Hejduk K., Latecki B., Lozinko J., “Technologia platynowych rezystorow krzemowego katarometru”, Materiafy konferencyjne VII Konferencji Naukowej C0E2002, Rzeszow (2002) T.2 133-136 (in Polish). [7] Lysko J.M., Budzynski T., Gorska M., Jazwinski J., Latecki B., Panas A, “Konstrukcja i elementy technologii polikrzemowych rezystorow TCD”, Materiafy kovfecencyjne I Krajowqj Konferencji Elektroniki KKE’2002, Kolobrzeg-Dzwirzyno (2002) T.2 811-814 (in Polish). [8] Polish patent pending P-353250 (08.04.2002). | uk_UA |
| dc.citation.journalTitle | Елементи теорії та прилади твердотілої електроніки | - |
| dc.coverage.placename | Львів | uk_UA |
| Appears in Collections: | Елементи теорії та прилади твердотілої електроніки. – 2002. – №458
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