| DC Field | Value | Language |
|---|
| dc.contributor.author | Dmitriev, Vadim | |
| dc.coverage.temporal | 23–25 листопада 2017 року | |
| dc.coverage.temporal | 23–25 November, 2017 | |
| dc.date.accessioned | 2018-04-12T13:05:51Z | - |
| dc.date.available | 2018-04-12T13:05:51Z | - |
| dc.date.created | 2017-12-23 | |
| dc.date.issued | 2017-12-23 | |
| dc.identifier.citation | Dmitriev V. The heat treatment influence on the main quality indicators of Ag/n-n+GaAs heterojunctions / Vadim Dmitriev // Litteris et Artibus : proceedings, 23–25 November, 2017. — Lviv : Lviv Polytechnic Publishing House, 2017. — P. 402–403. — (9th International academic conference «Computer science & engineering 2017» (CSE-2017)). | |
| dc.identifier.isbn | 978-966-941-108-2 | |
| dc.identifier.uri | https://ena.lpnu.ua/handle/ntb/40441 | - |
| dc.description.abstract | The effect of heat treatment on the parameters
and characteristics of Ag/n-n+GaAs heterojunctions is studied.
Various methods for the Schottky barrier height and the
nonideality factor determining have been examined and tested.
The most accurate method for determining the heterojunction
parameters using the current-voltage characteristic was found. | |
| dc.format.extent | 402-403 | |
| dc.language.iso | en | |
| dc.publisher | Видавництво Львівської політехніки | |
| dc.publisher | Lviv Polytechnic Publishing House | |
| dc.relation.ispartof | Litteris et Artibus : матеріали, 2017 | |
| dc.relation.ispartof | Litteris et Artibus : proceedings, 2017 | |
| dc.subject | heterojunction | |
| dc.subject | current-voltage characteristic | |
| dc.subject | barrier height | |
| dc.subject | nonideality factor | |
| dc.subject | silver | |
| dc.title | The heat treatment influence on the main quality indicators of Ag/n-n+GaAs heterojunctions | |
| dc.type | Conference Abstract | |
| dc.rights.holder | © Національний університет “Львівська політехніка”, 2017 | |
| dc.contributor.affiliation | Zaporizhzhya State Engineering Academy | |
| dc.format.pages | 2 | |
| dc.identifier.citationen | Dmitriev V. The heat treatment influence on the main quality indicators of Ag/n-n+GaAs heterojunctions / Vadim Dmitriev // Litteris et Artibus : proceedings, 23–25 November, 2017. — Lviv : Lviv Polytechnic Publishing House, 2017. — P. 402–403. — (9th International academic conference «Computer science & engineering 2017» (CSE-2017)). | |
| dc.relation.references | [1] P. Jayavel, J. Kumar, P. Ramasam, R. Premanand, “On the evaluation of Schottky barrier diode parameters of Pd, Au and Ag/n-GaAs”, Indian Journal of Engineering and Materials Sciences, Vol. 7, №5-6. – pp. 340–343, 2001. | |
| dc.relation.references | [2] Dmy`triyev V.S. “Inzhektuyuchi bar'yerni perehody` na osnovi arsenidu galiya dlya pry`ladiv NVCh diapazonu” Progresy`vni texnologiyi ta pry`lady`, № 10(1), pp. 50-53, 2017. | |
| dc.relation.references | [3] A. V. Belyaev, N. S. Boltovecz, E. F. Venger y` dr., “Fy`zy`chesky`e metodi dy`agnosty`ky` v my`kro- y` nanoelektrony`ke”, Khar`kov, Y`SMA, 284 p., 2011. | |
| dc.relation.references | [4] S. M. Sze, K. K. Ng “Physics of Semiconductor Devices, 3rd Edition”, Hoboken, A John Wiley & Sons, Inc., 815 р., 2007. | |
| dc.relation.references | [5] E. H. Rhoderick, R. H. Williams, “Metal-Semiconductor Contacts”, Oxford, Clarendon Press, 252 p., 1988. | |
| dc.relation.references | [6] S. Chand, L. Kamar, “Origin of non-ideal currentvoltage characteristics of metal-semiconductor contact: A numerical study”, Indian Journal of Engineering & Materials Sciences. Vol. 7, № 5-6. pp. 268–273, 2000. | |
| dc.relation.references | [7] Kudryk Ya.Ya., Shynkarenko V.V., Slipokurov V.S., Bigun R.I., Kudryk Ya.Ya, “Methods for determination of Schottky barrier height from I-V curves”, CriMiCo’2014, September 7-13, Sevastopol, Crimea, pp. 673-674. 2014. | |
| dc.relation.references | [8] M. P. Hernández, C. F. Alonso, J. L. Peña, “Barrier height determination in homogeneous nonideal Schottky contacts”, Journal of Physics D: Applied Physics, Vol. 34, №8, pp. 1157–1162, 2001. | |
| dc.relation.references | [9] N. Karaboga, S. Kockanat, H. Dogan, “The parameter extraction of the thermally annealed Schottky barrier diode using the modified artificial bee colony”, Applied Intelligence, Vol. 38, № 3. pp. 279–288, 2013. | |
| dc.relation.references | [10] A. Ortiz-Conde, Y. Ma, J. Thomson, etc, “Direct extraction of semiconductor deviceparameters using lateral optimization method”, Solid-State Electronics, Vol. 43, №4. pp. 845–848, 1999. | |
| dc.relation.referencesen | [1] P. Jayavel, J. Kumar, P. Ramasam, R. Premanand, "On the evaluation of Schottky barrier diode parameters of Pd, Au and Ag/n-GaAs", Indian Journal of Engineering and Materials Sciences, Vol. 7, No 5-6, pp. 340–343, 2001. | |
| dc.relation.referencesen | [2] Dmy`triyev V.S. "Inzhektuyuchi bar'yerni perehody` na osnovi arsenidu galiya dlya pry`ladiv NVCh diapazonu" Progresy`vni texnologiyi ta pry`lady`, No 10(1), pp. 50-53, 2017. | |
| dc.relation.referencesen | [3] A. V. Belyaev, N. S. Boltovecz, E. F. Venger y` dr., "Fy`zy`chesky`e metodi dy`agnosty`ky` v my`kro- y` nanoelektrony`ke", Khar`kov, Y`SMA, 284 p., 2011. | |
| dc.relation.referencesen | [4] S. M. Sze, K. K. Ng "Physics of Semiconductor Devices, 3rd Edition", Hoboken, A John Wiley & Sons, Inc., 815 r., 2007. | |
| dc.relation.referencesen | [5] E. H. Rhoderick, R. H. Williams, "Metal-Semiconductor Contacts", Oxford, Clarendon Press, 252 p., 1988. | |
| dc.relation.referencesen | [6] S. Chand, L. Kamar, "Origin of non-ideal currentvoltage characteristics of metal-semiconductor contact: A numerical study", Indian Journal of Engineering & Materials Sciences. Vol. 7, No 5-6. pp. 268–273, 2000. | |
| dc.relation.referencesen | [7] Kudryk Ya.Ya., Shynkarenko V.V., Slipokurov V.S., Bigun R.I., Kudryk Ya.Ya, "Methods for determination of Schottky barrier height from I-V curves", CriMiCo’2014, September 7-13, Sevastopol, Crimea, pp. 673-674. 2014. | |
| dc.relation.referencesen | [8] M. P. Hernández, C. F. Alonso, J. L. Peña, "Barrier height determination in homogeneous nonideal Schottky contacts", Journal of Physics D: Applied Physics, Vol. 34, No 8, pp. 1157–1162, 2001. | |
| dc.relation.referencesen | [9] N. Karaboga, S. Kockanat, H. Dogan, "The parameter extraction of the thermally annealed Schottky barrier diode using the modified artificial bee colony", Applied Intelligence, Vol. 38, No 3. pp. 279–288, 2013. | |
| dc.relation.referencesen | [10] A. Ortiz-Conde, Y. Ma, J. Thomson, etc, "Direct extraction of semiconductor deviceparameters using lateral optimization method", Solid-State Electronics, Vol. 43, No 4. pp. 845–848, 1999. | |
| dc.citation.conference | 7th International youth science forum «Litteris et Artibus» | |
| dc.citation.journalTitle | Litteris et Artibus : матеріали | |
| dc.citation.spage | 402 | |
| dc.citation.epage | 403 | |
| dc.coverage.placename | Львів | |
| dc.coverage.placename | Lviv | |
| Appears in Collections: | Litteris et Artibus. – 2017 р.
|
