https://oldena.lpnu.ua/handle/ntb/5583| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Degoda, V. | - |
| dc.contributor.author | Sofienko, A. | - |
| dc.date.accessioned | 2010-06-21T08:53:24Z | - |
| dc.date.available | 2010-06-21T08:53:24Z | - |
| dc.date.issued | 2009 | - |
| dc.identifier.citation | Degoda V. Phosphorescence and relaxation of conductivity in ZnSe after PHOTO- and X-ray excitation / V. Degoda, A. Sofienko // Oxide materials for electronic engineering – fabrication, properties and application OMEE-2009 : international scientific workshop, June 22–26, 2009, Lviv, Ukraine : book of abstracts / Lviv Polytechnic National University. – Lviv, 2009. – P. 150. | uk_UA |
| dc.identifier.uri | https://ena.lpnu.ua/handle/ntb/5583 | - |
| dc.language.iso | en | uk_UA |
| dc.publisher | Видавництво національного університету „Львівська політехніка” | uk_UA |
| dc.subject | x-ray | uk_UA |
| dc.subject | phosphorescence | uk_UA |
| dc.title | Phosphorescence and relaxation of conductivity in ZnSe after PHOTO- and X-ray excitation | uk_UA |
| dc.type | article | uk_UA |
| Appears in Collections: | Оксидні матеріали електронної техніки – отримання, властивості, застосування. – 2009 р. | |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.