DC Field | Value | Language |
dc.contributor.author | Aliev, Imir | |
dc.contributor.author | Ahmedova, Ceyran | |
dc.contributor.author | Aliev, Ikram | |
dc.contributor.author | Kuli-zade, Esmira | |
dc.date.accessioned | 2020-03-02T12:28:07Z | - |
dc.date.available | 2020-03-02T12:28:07Z | - |
dc.date.created | 2019-02-28 | |
dc.date.issued | 2019-02-28 | |
dc.identifier.citation | Character of Interaction and Glass Formation in the TlAs2Se3Te-TlAs2Te3Se System / Imir Aliev, Ceyran Ahmedova, Ikram Aliev, Esmira Kuli-zade // Chemistry & Chemical Technology. — Lviv : Lviv Politechnic Publishing House, 2019. — Vol 13. — No 2. — P. 236–239. | |
dc.identifier.uri | https://ena.lpnu.ua/handle/ntb/46462 | - |
dc.description.abstract | Характер взаємодії в системі TlAs2Se3Te–TlAs2Te3Se
досліджено за допомогою диференційного терміч-
ного, рентгеноструктурного та мікроструктурного методів,
а також внаслідок вимірювання мікротвердості та визна-
чення густини. На основі одержаних результатів побудовано
діаграму стану. Встановлено, що ділянка TlAs2Se3Te–
TlAs2Te3Se частково є квазібінарною секцією четвертинної
системи As, Tl//Se, Te. Показано, що за температури 548 K у
системі утворюється одна конгруентноплавка сполука
TlAs2Se2Te2. Визначено, що область розчинності твердих
розчинів на основі TlAs2Se3Te за кімнатної температури
досягають 10% мол. TlAs2Te3Se, а сполуки на основі TlAs2Te3Se
практично не спостерігаються. Показано, що всі отримані
зразки склоподібні. | |
dc.description.abstract | The character of the interaction in the
TlAs2Se3Te–TlAs2Te3Se system was studied by the
methods of DTA, RFA, MSA, and also by measuring the
microhardness and determining the density. State diagram
of the system was constructed. It was established that the
TlAs2Se3Te–TlAs2Te3Se system is partially a quasibinary
section of the quaternary As, Tl//Se, Te system. One
congruently melting compound TlAs2Se2Te2 is formed in
the system at 548 K. Solid solutions based on TlAs2Se3Te
at room temperature reach up to 10 mol % TlAs2Te3Se,
and solid solutions on the basis of TlAs2Te3Se are
practically not detected. All the samples obtained are vitreous. | |
dc.format.extent | 236-239 | |
dc.language.iso | en | |
dc.publisher | Видавництво Львівської політехніки | |
dc.publisher | Lviv Politechnic Publishing House | |
dc.relation.ispartof | Chemistry & Chemical Technology, 2 (13), 2019 | |
dc.relation.uri | https://doi.org/10.1016/S0022-3093(00)00072-7 | |
dc.relation.uri | https://doi.org/10.1364/OE.14.008088 | |
dc.relation.uri | https://doi.org/10.23939/chcht11.02.138 | |
dc.relation.uri | https://doi.org/10.1134/S00.6023608060259 | |
dc.relation.uri | https://doi.org/10.1134/S0036023607020234 | |
dc.subject | конгруентно | |
dc.subject | евтектичні | |
dc.subject | квазібінарні | |
dc.subject | тверді розчини | |
dc.subject | халькогеніди | |
dc.subject | congruently | |
dc.subject | eutectic | |
dc.subject | quasi-binary | |
dc.subject | solid solutions | |
dc.subject | chalcogenides | |
dc.title | Character of Interaction and Glass Formation in the TlAs2Se3Te-TlAs2Te3Se System | |
dc.title.alternative | Характер взаємодії та склоутворення в системі TlAs2Se3Te–TlAs2Te3Se | |
dc.type | Article | |
dc.rights.holder | © Національний університет „Львівська політехніка“, 2019 | |
dc.rights.holder | © Aliyev I., Ahmedova C., Aliyev Ik., Kuli-zade E., 2019 | |
dc.contributor.affiliation | Institute of Catalysis and Inorganic Chemistry named after academician M. Nagiyev | |
dc.contributor.affiliation | Adiyaman State University | |
dc.format.pages | 4 | |
dc.identifier.citationen | Character of Interaction and Glass Formation in the TlAs2Se3Te-TlAs2Te3Se System / Imir Aliev, Ceyran Ahmedova, Ikram Aliev, Esmira Kuli-zade // Chemistry & Chemical Technology. — Lviv : Lviv Politechnic Publishing House, 2019. — Vol 13. — No 2. — P. 236–239. | |
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dc.relation.references | 2. Iovu M., Shutov C., Rebeja S., Colomeyco E.: J. Optoelectron. Adv. Mater., 2000, 2, 53. | |
dc.relation.references | 3. Littler I., Fu L., Mägi E. et al.:J. Opt. Express, 2006, 14, 8088. https://doi.org/10.1364/OE.14.008088 | |
dc.relation.references | 4. Hineva Т., Petkova Т.,Popov С. et al.: J. Optoelectron. Adv. Mater., 2007, 9, 326. | |
dc.relation.references | 5. Babaiev A., Muradov R., Sultanov S., Askhabov A.: Neorg. Materialy, 2008, 44, 1319. | |
dc.relation.references | 6. Aliyev I., Ahmedova C., Farzaliyev A.: Chem. Chem. Technol., 2017, 11, 138. https://doi.org/10.23939/chcht11.02.138 | |
dc.relation.references | 7. Aliyev I., BabanlyM., Farzaliev A.: XI Int. Conf. on the Physics and Technology of Thin Films. Ukraine, Ivano-Frankivsk, 7-12May 2007, 86. | |
dc.relation.references | 8. Aliyev I., Aliyev I.G., Farzaliev A., Veliev D.: Rus. J. Inorg. Chem., 2008, 53, 962. https://doi.org/10.1134/S00.6023608060259 | |
dc.relation.references | 9. Veliev D., Aliyev I., Mamedova A.: Zh. Neorg. Khim., 2007, 52, 312. | |
dc.relation.references | 10. Farzaliev A., Aliyev I., Aliyev O., Aliyev I.G.: Chem. Problems, 2006, 2, 269. https://doi.org/10.1134/S0036023607020234 | |
dc.relation.references | 11. Vorobyev Yu., Velikova N., Kirilenko V., Shchelkov R.: Neorg. Materialy, 1987, 23, 1110. | |
dc.relation.references | 12. Aliyev I.: Doct. thesis. Physicochemical basis for obtaining new materials in chalcogenide systems of arsenic with indium and thallium chalcogenides. Baku 1992. | |
dc.relation.referencesen | 1. Hari P., Cheneya C., Luepkea G. et al., J. Non-Crystal. Solid., 2000, 270, 265. https://doi.org/10.1016/S0022-3093(00)00072-7 | |
dc.relation.referencesen | 2. Iovu M., Shutov C., Rebeja S., Colomeyco E., J. Optoelectron. Adv. Mater., 2000, 2, 53. | |
dc.relation.referencesen | 3. Littler I., Fu L., Mägi E. et al.:J. Opt. Express, 2006, 14, 8088. https://doi.org/10.1364/OE.14.008088 | |
dc.relation.referencesen | 4. Hineva T., Petkova T.,Popov S. et al., J. Optoelectron. Adv. Mater., 2007, 9, 326. | |
dc.relation.referencesen | 5. Babaiev A., Muradov R., Sultanov S., Askhabov A., Neorg. Materialy, 2008, 44, 1319. | |
dc.relation.referencesen | 6. Aliyev I., Ahmedova C., Farzaliyev A., Chem. Chem. Technol., 2017, 11, 138. https://doi.org/10.23939/chcht11.02.138 | |
dc.relation.referencesen | 7. Aliyev I., BabanlyM., Farzaliev A., XI Int. Conf. on the Physics and Technology of Thin Films. Ukraine, Ivano-Frankivsk, 7-12May 2007, 86. | |
dc.relation.referencesen | 8. Aliyev I., Aliyev I.G., Farzaliev A., Veliev D., Rus. J. Inorg. Chem., 2008, 53, 962. https://doi.org/10.1134/S00.6023608060259 | |
dc.relation.referencesen | 9. Veliev D., Aliyev I., Mamedova A., Zh. Neorg. Khim., 2007, 52, 312. | |
dc.relation.referencesen | 10. Farzaliev A., Aliyev I., Aliyev O., Aliyev I.G., Chem. Problems, 2006, 2, 269. https://doi.org/10.1134/S0036023607020234 | |
dc.relation.referencesen | 11. Vorobyev Yu., Velikova N., Kirilenko V., Shchelkov R., Neorg. Materialy, 1987, 23, 1110. | |
dc.relation.referencesen | 12. Aliyev I., Doct. thesis. Physicochemical basis for obtaining new materials in chalcogenide systems of arsenic with indium and thallium chalcogenides. Baku 1992. | |
dc.citation.issue | 2 | |
dc.citation.spage | 236 | |
dc.citation.epage | 239 | |
dc.coverage.placename | Львів | |
dc.coverage.placename | Lviv | |
Appears in Collections: | Chemistry & Chemical Technology. – 2019. – Vol. 13, No. 2
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