https://oldena.lpnu.ua/handle/ntb/42618| Title: | Investigation of indium antimonide microcrystals irradiated with fast neutrons |
| Authors: | Bolshakova, I. Leroy, C. Kumada, M. |
| Affiliation: | Lviv Polytechnic National University Laboratory R-J.A.-Levesque, Montreal University, Canada National Institute of Radiological Sciences, Japan |
| Bibliographic description (Ukraine): | Bolshakova I. Investigation of indium antimonide microcrystals irradiated with fast neutrons / I. Bolshakova, C. Leroy, M. Kumada // Вісник Національного університету "Львівська політехніка". – 2002. – № 458 : Елементи теорії та прилади твердотілої електроніки. – С. 241–246. – Bibliography: 4 titles. |
| Journal/Collection: | Елементи теорії та прилади твердотілої електроніки |
| Issue Date: | 2002 |
| Publisher: | Видавництво Національного університету «Львівська політехніка» |
| Country (code): | UA |
| Place of the edition/event: | Львів |
| Number of pages: | 241–246 |
| Abstract: | Microcrystals of III-V semiconductor compound indium antimonide were obtained by means of complex doping in the growth process. Such compounds are stable after irradiation with fast neutron fluences up to 1016 n⋅cm-2. Magnetic field microsensors developed on their base are applied in magnetic measuring systems for charged particle accelerators and in the space instrumentation building. |
| URI: | https://ena.lpnu.ua/handle/ntb/42618 |
| Copyright owner: | © I. Bolshakova, C. Leroy, M. Kumada, 2002 |
| References (Ukraine): | [1] Bolshakova I. Improvement of radiation resistance of magnetic field microsensors // Sensors & $ % :" – 1999. - V.76. - P.152-155. [2] Bolshakova I., Moskovets T., Krukovsky S., Zayachuk D. Radiation resistant microcrystals and thin films of III-V semiconductors // Materials Science & Engineering. – 2000. – B 69-70. - P. 441-443. [3] Bolshakova I., Koptsev P., Melnyk I., Moskovets M., Krukovsky S., Zayachuk D. Control of parameters of III-V compound microcrystals and epitaxial layers by means of complex doping // Crystal Research and Technology. - 2001. V. 36. - )-10. – P. 989-997. [4] Zaitov F., Isayev F., Polyakov A., Kuzmin A. Influence of penetrating radiation on the properties of indium antimonide and indium arsenide. – Baku, 1984. – 205 p. |
| Content type: | Article |
| Appears in Collections: | Елементи теорії та прилади твердотілої електроніки. – 2002. – №458 |
| File | Description | Size | Format | |
|---|---|---|---|---|
| 46_241-246.pdf | 189.97 kB | Adobe PDF | View/Open |
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