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Please use this identifier to cite or link to this item: https://oldena.lpnu.ua/handle/ntb/40465
Title: Influence of the deposition time on the structure and optical properties of indium sulfide films (In2S3)
Authors: Hlad, Roman
Shapoval, Pavlo
Stadnik, Vitalii
Sozanskiy, Martyn
Guminilovych, Ruslana
Yatchyshyn, Yosyp
Affiliation: Lviv Polytechnic National University
Bibliographic description (Ukraine): Influence of the deposition time on the structure and optical properties of indium sulfide films (In2S3) / Roman Hlad, Pavlo Shapoval, Vitalii Stadnik, Martyn Sozanskiy, Ruslana Guminilovych, Yosyp Yatchyshyn // Litteris et Artibus : proceedings, 23–25 November, 2017. — Lviv : Lviv Polytechnic Publishing House, 2017. — P. 54–55. — (6th International academic conference «Chemistry & chemical technology 2017» (CCT-2017)).
Bibliographic description (International): Influence of the deposition time on the structure and optical properties of indium sulfide films (In2S3) / Roman Hlad, Pavlo Shapoval, Vitalii Stadnik, Martyn Sozanskiy, Ruslana Guminilovych, Yosyp Yatchyshyn // Litteris et Artibus : proceedings, 23–25 November, 2017. — Lviv : Lviv Polytechnic Publishing House, 2017. — P. 54–55. — (6th International academic conference «Chemistry & chemical technology 2017» (CCT-2017)).
Is part of: Litteris et Artibus : матеріали, 2017
Litteris et Artibus : proceedings, 2017
Conference/Event: 7th International youth science forum «Litteris et Artibus»
Journal/Collection: Litteris et Artibus : матеріали
Issue Date: 23-Dec-2017
Publisher: Видавництво Львівської політехніки
Lviv Polytechnic Publishing House
Place of the edition/event: Львів
Lviv
Temporal Coverage: 23–25 листопада 2017 року
23–25 November, 2017
Keywords: indium sulfide
chemical deposition
semiconductor films
thin films
structure and morphology of thin films
Number of pages: 2
Page range: 54-55
Start page: 54
End page: 55
Abstract: The process of synthesis of indium sulphide (In2S3) semiconductor thin films by a chemical synthesis method was done. The acetic acid has been used as a complexing agent. Ivestigations of thin films properties were carried out by using X-ray powder diffraction, scanning eletron microscopy, optical spectroscopy. The phase composition, optical transmission and absorption spectra of In2S3 films were studied. The value of bang gap energy has been experimentally determined from spectral dependences of optical transmission of In2S3 films, and ranges from 2,31 to 2,55 eV.
URI: https://ena.lpnu.ua/handle/ntb/40465
ISBN: 978-966-941-108-2
Copyright owner: © Національний університет “Львівська політехніка”, 2017
References (Ukraine): [1] N. Revathi, “Synthesis and physical behaviour of In2S3 films”, Applied Surface Science, vol. 254,pp. 5291-5298, June 2008.
[2] А. Omelianovych, “Effect of post annealing on the characteristics of In2S3 buffer layer grown by chemical bath deposition on a CIGS substrate”, Current Applied Physics, pp. 1-28, Aug. 2015,doi: 10.1016/j.cap.2015.08.019.
[3] S.M Pawar, “Recent status of chemical bath deposited metal chalcogenide and metal oxide thin films”, Curr. Appl. Phys., vol. 11(2), pp. 117-161,2011.
[4] W. Kraus, G. Nolze, PowderCell for Windows (version 2.4), Berlin, Federal Institute for Materials Research and Testing, March 2000.
[5] Z. Gao, “Investigation on growth of In2S3 thin films by chemical bath deposition”, Materials Science in Semiconductor Processing , vol. 15, pp. 187-193,Mar. 2012.
[6] В. Asenjo, “Properties of In2S3 thin films deposited onto ITO/glass substrates by chemical bath deposition”, Journal of Physics and Chemistry of Solids, vol. 71, pp.1629-1633, Sept. 2010.
[7] В. Yahmadi, “Structural analysis of indium sulphide thin films elaborated by chemical bath deposition” Thin Solid Films, vol. 473, pp. 201-207, Mar. 2005,doi:10.1016/j.tsf.2004.04.002.
[8] K. Yamaguchi, “Structural and compositional analyses on indium sulfide thin films deposited in aqueous chemical bath containing indium chloride and thiacetamide”, Thin Solid Films, vol. 431-432,pp. 354-358, 2003.
[9] C. Lokhande, “Chemical bath deposition of indium sulphide thin films: preparation and characterization”, Thin Solid Films vol. 340,pp. 18-23, June 1998.
References (International): [1] N. Revathi, "Synthesis and physical behaviour of In2S3 films", Applied Surface Science, vol. 254,pp. 5291-5298, June 2008.
[2] A. Omelianovych, "Effect of post annealing on the characteristics of In2S3 buffer layer grown by chemical bath deposition on a CIGS substrate", Current Applied Physics, pp. 1-28, Aug. 2015,doi: 10.1016/j.cap.2015.08.019.
[3] S.M Pawar, "Recent status of chemical bath deposited metal chalcogenide and metal oxide thin films", Curr. Appl. Phys., vol. 11(2), pp. 117-161,2011.
[4] W. Kraus, G. Nolze, PowderCell for Windows (version 2.4), Berlin, Federal Institute for Materials Research and Testing, March 2000.
[5] Z. Gao, "Investigation on growth of In2S3 thin films by chemical bath deposition", Materials Science in Semiconductor Processing , vol. 15, pp. 187-193,Mar. 2012.
[6] V. Asenjo, "Properties of In2S3 thin films deposited onto ITO/glass substrates by chemical bath deposition", Journal of Physics and Chemistry of Solids, vol. 71, pp.1629-1633, Sept. 2010.
[7] V. Yahmadi, "Structural analysis of indium sulphide thin films elaborated by chemical bath deposition" Thin Solid Films, vol. 473, pp. 201-207, Mar. 2005,doi:10.1016/j.tsf.2004.04.002.
[8] K. Yamaguchi, "Structural and compositional analyses on indium sulfide thin films deposited in aqueous chemical bath containing indium chloride and thiacetamide", Thin Solid Films, vol. 431-432,pp. 354-358, 2003.
[9] C. Lokhande, "Chemical bath deposition of indium sulphide thin films: preparation and characterization", Thin Solid Films vol. 340,pp. 18-23, June 1998.
Content type: Conference Abstract
Appears in Collections:Litteris et Artibus. – 2017 р.

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